The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Jun. 06, 2018
Applicant:
King Fahd University of Petroleum and Minerals, Dhahran, SA;
Inventors:
Ahsanulhaq Qurashi, Dhahran, SA;
Ibrahim Khan, Dhahran, SA;
Assignee:
King Fahd University of Petroleum and Minerals, Dhahran, SA;
Primary Examiner:
Int. Cl.
CPC ...
C25B 1/00 (2006.01); H01M 4/02 (2006.01); C30B 7/12 (2006.01); C30B 29/60 (2006.01); C30B 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 7/12 (2013.01); C30B 29/16 (2013.01); C30B 29/60 (2013.01);
Abstract
A method of forming a one-dimensional nanoarray of InOnanowires on indium foil is disclosed. The nanowires of InOhave diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The InOnanoarray may have a nanowire density of 200-300 nanowires per μmindium foil and a band gap energy of 2.63-3.63 eV. The InOnanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.