The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2019

Filed:

Jul. 15, 2015
Applicant:

Corner Star Limited, Kowloon, HK;

Inventors:

Satish Bhusarapu, Houston, TX (US);

Puneet Gupta, Houston, TX (US);

Yue Huang, Midlothian, VA (US);

Assignee:

Corner Star Limited, Kowloon, HK;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/029 (2006.01); C01B 33/027 (2006.01); B01J 8/18 (2006.01); F23C 10/18 (2006.01); C01B 33/03 (2006.01);
U.S. Cl.
CPC ...
C01B 33/027 (2013.01); B01J 8/1809 (2013.01); B01J 8/1827 (2013.01); B01J 8/1836 (2013.01); C01B 33/029 (2013.01); F23C 10/18 (2013.01); B01J 2208/00398 (2013.01); B01J 2208/00407 (2013.01); B01J 2208/00539 (2013.01); C01B 33/03 (2013.01);
Abstract

Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.


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