The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Jul. 26, 2016
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Inventors:
Assignee:
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/02 (2006.01); B06B 1/02 (2006.01); H03K 19/0185 (2006.01); H03K 17/687 (2006.01); H03K 3/356 (2006.01); H03K 17/082 (2006.01); A61B 8/00 (2006.01);
U.S. Cl.
CPC ...
B06B 1/0215 (2013.01); G05F 3/02 (2013.01); H03K 3/356182 (2013.01); H03K 17/0822 (2013.01); H03K 17/687 (2013.01); H03K 19/018521 (2013.01); A61B 8/4483 (2013.01); H03K 2217/0063 (2013.01);
Abstract
A transmission channel transmits high-voltage pulses in a transmission phase and receives echoes of the high-voltage pulses in a receiving phase. The transmission channel includes a buffer with anti-memory circuitry to couple drain conduction terminals of buffer transistors of a high-side of a buffer of the transmission channel to a low-side reference voltage of a low-side of the buffer and couple drain conduction terminals of buffer transistors of the low-side of the buffer to a high-side reference voltage of the high-side of the buffer during the clamping phase.