The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Mar. 28, 2019
National Chiao Tung University, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A biomedical stimulation protection device includes a current source, a first upper P-channel metal oxide semiconductor field effect transistor (PMOSFET), a first adaptive bias circuit, and six first stimulating metal oxide semiconductor field effect transistors (MOSFETs). The first adaptive bias circuit receives a power voltage (VDD), a double power voltage (2VDD), and a triple power voltage (3VDD). The first upper MOSFET and the first stimulating MOSFETs are electrically cascoded with each other. The first adaptive bias circuit turns on at least one of the first stimulating MOSFETs according to VDD, 2VDD, and 3VDD, so as to stimulate a physiological tissue and control a voltage difference between two terminals of each of the first upper MOSFET and the first stimulating MOSFETs to be lower than or equal to VDD.