The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Sep. 05, 2018
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Akio Ito, Hamamatsu, JP;
Kazuue Fujita, Hamamatsu, JP;
Daisuke Kawaguchi, Hamamatsu, JP;
Tatsuo Dougakiuchi, Hamamatsu, JP;
Tadataka Edamura, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A method of manufacturing a quantum cascade laser beam source () includes: preparing a semiconductor stacked body (); forming a pair of first excavated portions (and) and a ridge portion which is interposed between the pair of first excavated portions (and); forming channel structures (and) and circumferential edge portions (and) which are formed to interpose the channel structures (and) between the ridge portion () and the circumferential edge portion; forming an electrode pattern () in contact with a first area () and forming an electrode pattern () in contact with a second area (); fixing a crystal growth surface side to a support substrate (); removing an Fe-doped (semi-insulating) InP single-crystal substrate (); fixing a Si substrate (); and peeling the support substrate ().