The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Aug. 08, 2017
Applicant:
Furukawa Electric Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
FURUKAWA ELECTRIC CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); G02B 6/42 (2006.01); H01S 5/24 (2006.01); H01S 5/022 (2006.01); H01S 5/10 (2006.01); H01S 5/16 (2006.01); G02B 6/43 (2006.01); H01S 5/223 (2006.01); H01S 5/227 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); G02B 6/42 (2013.01); G02B 6/4203 (2013.01); G02B 6/4295 (2013.01); H01S 5/02284 (2013.01); H01S 5/1017 (2013.01); H01S 5/16 (2013.01); H01S 5/24 (2013.01); G02B 6/43 (2013.01); H01S 5/0425 (2013.01); H01S 5/166 (2013.01); H01S 5/168 (2013.01); H01S 5/2202 (2013.01); H01S 5/227 (2013.01); H01S 5/2231 (2013.01); H01S 2301/16 (2013.01); H01S 2301/185 (2013.01);
Abstract
A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.