The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Dec. 29, 2014
Applicant:
Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, CN;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/16 (2006.01); H01L 35/34 (2006.01); C01B 19/00 (2006.01); C01D 17/00 (2006.01); C01G 5/00 (2006.01); G01N 23/00 (2006.01); G01N 27/04 (2006.01);
U.S. Cl.
CPC ...
H01L 35/16 (2013.01); H01L 35/34 (2013.01); C01B 19/007 (2013.01); C01D 17/003 (2013.01); C01G 5/006 (2013.01); C01P 2002/72 (2013.01); G01N 23/00 (2013.01); G01N 27/04 (2013.01);
Abstract
The present application discloses a thermoelectric material, which contains CsAgTecrystal material. At 700K, the thermoelectric material has an optimum dimensionless figure-of-merit ZT as high as 1.6 and a high stability, and the thermoelectric material can be recycled. The present application also discloses a method for preparing the CsAgTecrystal material. The CsAgTecrystal material is one-step synthesized by a high-temperature solid-state method, using a raw material containing Cs, Ag and Te, so that the high-purity product is obtained while the synthesis time is greatly shortened.