The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
May. 17, 2018
Showa Denko K. K., Tokyo, JP;
Akira Uzawa, Chichibu, JP;
Noriyoshi Seo, Chichibu, JP;
Atsushi Matsumura, Chichibu, JP;
Noriyuki Aihara, Chichibu, JP;
SHOWA DENKO K. K., Tokyo, JP;
Abstract
A light-emitting element layerincludes: an n-type contact layer; a first light-emitting layer; a tunnel junction layer; a second light-emitting layer; and a p-type contact layerlaminated in this order. The first light-emitting layerand the second light-emitting layeremit light of the same wavelength. The tunnel junction layerincludes: a p-type tunnel layermade of AlGaAs containing p-type impurities (C); and an n-type tunnel layermade of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layerhaving a higher concentration of n-type impurities than the n-type tunnel layeris arranged between the p-type tunnel layerand the n-type tunnel layer