The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

May. 23, 2017
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventor:

Akie Yutani, Chiyoda-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/11 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/11 (2013.01); H01L 27/14649 (2013.01); H01L 31/18 (2013.01);
Abstract

This infrared ray detection element has a diode part that includes serially connected first and second p-n junction diodes. The diode part has: n-type and p-type first regions in a well shape that are adjacent to each other; a p-type second region that constitutes a first p-n junction diode with the n-type first region; and an n-type second region that constitutes a second p-n junction diode with the p-type first region. The n-type and p-type first regions are respectively provided with n-type and p-type third regions that electrically connect the first p-n junction diode and the second p-n junction diode via a conductive material. The n-type first region has a p-type fourth region provided between the p-type first region and the p-type second region. The p-type first region has an n-type fourth region provided between the n-type first region and the n-type second region.


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