The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Sep. 15, 2016
Applicant:

Société Française DE Détecteurs Infrarouges—sofradir, Palaiseau, FR;

Inventors:

Laurent Rubaldo, Fontaine, FR;

Nicolas Pere Laperne, Grenoble, FR;

Alexandre Kerlain, Grenoble, FR;

Alexandru Nedelcu, Bourg la Reine, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/101 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035209 (2013.01); H01L 31/035236 (2013.01); H01L 31/101 (2013.01); H01L 31/1035 (2013.01);
Abstract

The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking region formed by at least second and third semiconductor materials configured to prevent the majority charge carriers from passing between the photon absorbing region and a contact region, the second semiconductor material presenting a second bandgap energy value higher than the first bandgap energy value to form a quantum well with the third semiconductor material. The blocking region is doped.


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