The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Aug. 03, 2016
Applicant:
Nlt Technologies, Ltd., Kanagawa, JP;
Inventor:
Kazushige Takechi, Kanagawa, JP;
Assignee:
NLT TECHNOLOGIES, LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 31/0224 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); G01J 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G01J 1/44 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14689 (2013.01); H01L 29/66969 (2013.01); H01L 29/868 (2013.01); H01L 31/022466 (2013.01);
Abstract
Two gate electrodes are provided on upper and lower sides of an oxide semiconductor active layer through respective insulating films. In addition, a first read-out electrode and a second read-out electrode are provided on right and left sides of the oxide semiconductor active layer. In the optical sensor element, in a case where a voltage is applied to each gate electrode, a potential difference occurs between the first read-out electrode and the second read-out electrode, and intensity of irradiation light is detected based on a current that flows between the read-out electrodes.