The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Sep. 09, 2016
Infineon Technologies Ag, Neubiberg, DE;
Bernhard Goller, Villach, AT;
Kurt Matoy, Strau, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of fabricating a semiconductor device includes etching a first surface of a semiconductor substrate from a first side using a first etching process to expose a second surface. The second surface includes a first plurality of features. The first plurality of features has an average height that is a first height. The second surface of the semiconductor substrate is etched from the first side using a second etching process to expose a third surface of the semiconductor substrate. The second etching process converts the first plurality of features into a second plurality of features. The second plurality of features has an average height that is a second height. The second height is less than the first height. A conductive layer is formed over the third surface of the semiconductor substrate using a physical deposition process.