The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Mar. 31, 2016
Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, Tokyo, JP;
Daisuke Arai, Saitama, JP;
Mizue Kitada, Saitama, JP;
Takeshi Asada, Saitama, JP;
Takeshi Yamaguchi, Saitama, JP;
Noriaki Suzuki, Saitama, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A power semiconductor device according to the present invention has a super junction structure, and includes a low-resistance semiconductor layer, an n−-type column region, p−-type column regions, a base region, trenches, gate insulation films, gate electrodes, source regions, interlayer insulation films, contact holes, metal plugs, p+-type diffusion regions, a source electrode and a gate pad electrode. An active element part includes an n−-type column region between a predetermined p−-type column region disposed closest to a gate pad part and a predetermined n−-type column region disposed closest to the gate pad part among the n−-type column regions which are in contact with the trenches. The present invention provides a power semiconductor device which can satisfy a demand for reduction in cost and downsizing of electronic equipment, can lower ON resistance while maintaining a high withstand voltage, and can possess a large breakdown resistance.