The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Mar. 09, 2018
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Tsuneo Ogura, Kamakura Kanagawa, JP;
Tomoko Matsudai, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
According to one embodiment, an IGBT has a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the second conductivity type, a fourth semiconductor layer of the first conductivity type, and a fifth semiconductor layer of the second conductivity type, between a first electrode and a second electrode, on the first electrode in order. A third electrode is provided on the third semiconductor layer, the fourth semiconductor layer, and the fifth semiconductor layer via a gate insulating film, and is insulated from the first electrode and the second electrode. A fourth electrode is provided between the third electrode and the second semiconductor layer, and is insulated from the third electrode and the second semiconductor layer.