The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Nov. 10, 2017
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Cristian Cismaru, Newbury Park, CA (US);
Peter J. Zampardi, Jr., Newbury Park, CA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/68 (2006.01); H01L 29/73 (2006.01); H01L 31/02 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/68 (2013.01); H01L 29/475 (2013.01); H01L 29/66007 (2013.01); H01L 29/66212 (2013.01); H01L 29/66318 (2013.01); H01L 29/73 (2013.01); H01L 29/872 (2013.01); H01L 31/02002 (2013.01); H01L 29/0692 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49171 (2013.01); H01L 2924/15184 (2013.01);
Abstract
Disclosed are structures and methods related to metallization of a gallium arsenide (GaAs) layer. In some embodiments, a tantalum nitride (TaN) layer can be formed on a doped GaAs layer, and a metal layer can be formed on the TaN layer. Such a structure can be included in a Schottky diode. In some embodiments, such a Schottky diode can be fabricated utilizing heterojunction bipolar transistor (HBT) processes.