The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
May. 14, 2018
Renesas Electronics Corporation, Tokyo, JP;
Atsushi Yoshitomi, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To provide a semiconductor device having improved reliability by relaxing the unevenness of the injection distribution of electrons and holes into a charge accumulation film attributable to the shape of the fin of a MONOS memory comprised of a fin transistor. Of a memory gate electrode configuring a memory cell formed above a fin, a portion contiguous to an ONO film that covers the upper surface of the fin and a portion contiguous to the ONO film that covers the side surface of the fin are made of electrode materials different in work function, respectively, and the boundary surface between them is located below the upper surface of the fin.