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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10439027 B1

PDFFull Text
Date of Patent:
Oct. 08, 2019

Filed:

Jul. 30, 2018

Silicon carbide semiconductor device and method for manufacturing the same

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Chiaki Kudou, Toyama, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Zandra V Smith

Assistant Examiner:

Molly K Reida

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02529 (2013.01); H01L 21/049 (2013.01); H01L 21/0485 (2013.01); H01L 21/28052 (2013.01); H01L 21/31056 (2013.01); H01L 21/76828 (2013.01); H01L 23/5329 (2013.01); H01L 29/0856 (2013.01); H01L 29/1095 (2013.01); H01L 29/41741 (2013.01); H01L 29/4232 (2013.01); H01L 29/45 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01);
Abstract

Provided is a silicon carbide semiconductor device that is further reduced in resistance. Silicon carbide semiconductor device includes silicon carbide semiconductor layer disposed on a first main surface of substrate, electrode layer containing polysilicon disposed on the silicon carbide semiconductor layer with first insulating layer interposed between the electrode layer and the silicon carbide semiconductor layer, second insulating layer that covers the silicon carbide semiconductor layer and the electrode layer, first silicide electrode that is located in first opening part formed in the first insulating layer and the second insulating layer and forms ohmic contact with a part of the silicon carbide semiconductor layer, and second silicide electrode that is located in second opening part formed in the second insulating layer and is in contact with a part of the electrode layer.

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