The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Nov. 02, 2017
SK Hynix Inc., Gyeonggi-do, KR;
Yeounsoo Kim, Chungcheongbuk-do, KR;
Donghyun Woo, Chungcheongbuk-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A stack-type image sensor include a first substrate comprising a photoelectric conversion element and a storage transistor connecting the photoelectric conversion element to a charge storage element; and a second substrate comprising a transfer transistor connecting the charge storage element to a floating diffusion, wherein the first substrate and the second substrate are stacked. The charge storage element comprises: a first electrode and a second electrode positioned adjacent to the first electrode and having a sidewall facing a sidewall of the first electrode, wherein the first electrodes and the second electrodes comprise at least one bonding pad formed in the first or second substrate; and a dielectric layer inserted between the sidewall of the first electrode and the sidewall of the second electrode, which face each other.