The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Sep. 19, 2017
Infineon Technologies Austria Ag, Villach, AT;
Martin Vielemeyer, Villach, AT;
Walter Rieger, Arnoldstein, AT;
Martin Pölzl, Ossiach, AT;
Gerhard Nöbauer, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method of manufacturing a semiconductor die includes: forming a power HEMT (high-electron-mobility transistor) in a III-nitride semiconductor substrate, the power HEMT having a gate, a source and a drain; monolithically integrating a first gate driver HEMT with the power HEMT in the III-nitride semiconductor substrate, the first gate driver HEMT having a gate, a source and a drain and logically forming part of a driver; and electrically connecting the first gate driver HEMT to the gate of the power HEMT so that the first gate driver HEMT is operable to turn the power HEMT off or on responsive to an externally-generated control signal received from the driver or other device.