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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10438942 B1

PDFFull Text
Date of Patent:
Oct. 08, 2019

Filed:

Sep. 29, 2016

Field-effect transistor with protection diodes

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Hiroaki Maehara, Tokyo, JP;

Miyo Miyashita, Tokyo, JP;

Kazuya Yamamoto, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Kevin J Comber

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/535 (2006.01); H01L 27/06 (2006.01); H01L 21/8252 (2006.01); H01L 29/20 (2006.01); H01L 29/872 (2006.01); H01L 29/778 (2006.01); H01L 29/8605 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 21/8252 (2013.01); H01L 23/535 (2013.01); H01L 27/0248 (2013.01); H01L 27/0288 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 27/0251 (2013.01); H01L 29/2003 (2013.01); H01L 29/7786 (2013.01); H01L 29/8605 (2013.01); H01L 29/872 (2013.01);
Abstract

A field-effect transistor with protection diodes includes: a field-effect transistor; and a two-terminal electrostatic protection circuit connected between a gate and a source of the field-effect transistor, wherein the two-terminal electrostatic protection circuit comprises: a first diode that is positioned on a reverse-biased side when a voltage lower than a potential of the source is applied to the gate and has a reverse withstand voltage lower than a reverse withstand voltage between the gate and the source of the field-effect transistor; a second diode that is positioned on a forward-biased side when a voltage lower than a potential of the source is applied to the gate and is connected in anti-series to the first diode; and a resistor that is connected in series to a diode pair comprising the first diode and the second diode and formed using a same channel layer as that of the field-effect transistor.

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