The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Sep. 17, 2014
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Toshiyuki Kouchi, Kawasaki, JP;
Masaru Koyanagi, Ota, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); G11C 5/00 (2006.01); G11C 16/04 (2006.01); G11C 16/06 (2006.01); H01L 23/00 (2006.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); G11C 5/00 (2013.01); G11C 5/025 (2013.01); G11C 5/063 (2013.01); G11C 16/0483 (2013.01); G11C 16/06 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73203 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/1438 (2013.01);
Abstract
According to one embodiment, M (M represents an integer of 2 or larger) semiconductor chips and through electrodes for N (N represents an integer of 2 or larger) channels are provided. The M semiconductor chips are stacked in sequence. The through electrodes are embedded in the semiconductor chips to connect electrically the semiconductor chips in the direction of stacking. The connection destination of the through electrodes are exchanged between one or more upper and lower layers of the semiconductor chips.