The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Sep. 12, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventor:
Toshiyuki Morita, Yokkaichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53242 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53257 (2013.01);
Abstract
A semiconductor device according to present embodiment has first wirings provided in a first area and made of a first metal. A first gap is provided between the first wirings adjacent to each other. Second wirings or contact plugs are provided in a second area in which the first wirings are not provided. The second wirings or contact plugs are made of a second metal. A first insulation film is provided between the second wirings or contact plugs adjacent to each other. The first insulation film has second gaps. A second insulation film is provided on the first wirings, the first gap, and the second gaps.