The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Aug. 17, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Takashi Ohashi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/31144 (2013.01); H01L 21/76804 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01);
Abstract

A semiconductor device according to the present embodiment is provided with a lower layer. A first film is provided on the lower layer. A first side-wall film covers a contact hole provided in the first film, along a side wall in the contact hole and from a lower end of the contact hole to an upper end of the contact hole. A second side-wall film is provided on the side wall in the contact hole via the first side-wall film, to cover the contact hole from a position higher than a lower end of the first side-wall film to the upper end of the contact hole. A conductor is provided inside the first and second side-wall films in the contact hole. An upper layer is provided on the first film.


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