The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
May. 29, 2018
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Bradley David Sucher, Murphy, TX (US);
Bernard John Fischer, Richardson, TX (US);
Abbas Ali, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 29/0649 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01);
Abstract
An electronic device includes a semiconductor substrate having a plurality of trenches formed therein. Each trench includes a sidewall having a doped region, a sidewall liner, and a filler material. The substrate has a slip density of less than 5 cm. The low slip density is achieved by a novel annealing protocol performed after implanting the dopant in the sidewall to repair damage and/or stress caused by the implant process.