The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Apr. 25, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Chun Yan, San Jose, CA (US);

Xinyu Bao, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B08B 7/00 (2006.01); H01L 21/67 (2006.01); B08B 7/04 (2006.01); B08B 5/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02661 (2013.01); B08B 5/00 (2013.01); B08B 7/0035 (2013.01); B08B 7/0071 (2013.01); B08B 7/04 (2013.01); H01L 21/0206 (2013.01); H01L 21/0245 (2013.01); H01L 21/02046 (2013.01); H01L 21/02455 (2013.01); H01L 21/02538 (2013.01); H01L 21/67115 (2013.01);
Abstract

Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.


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