The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Dec. 08, 2017
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Koji Okuno, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
There are provided a method for producing a semiconductor structure exhibiting excellent crystallinity by preventing the occurrence of a strain, and a method for producing a semiconductor device. The semiconductor structure production method includes a decomposition layer formation step, a bridging portion formation step, a decomposition step, and a semiconductor layer formation step. In the decomposition layer formation step, a plurality of threading dislocations are extended during growth of a decomposition layer. In the bridging portion formation step, the threading dislocations are exposed to the surface of the bridging portion. In the decomposition step, the threading dislocations exposed to the surface of the bridging portion are widened to thereby provide a plurality of through holes penetrating the bridging portion, and the decomposition layer exposed in the interior of the through holes is decomposed.