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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10438715 B1

PDFFull Text
Date of Patent:
Oct. 08, 2019

Filed:

Jul. 24, 2015

Nanostructure, method of preparing the same, and panel units comprising the nanostructure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Eunhyoung Cho, Hwaseong-si, KR;

Inyong Song, Suwon-si, KR;

Changseung Lee, Yongin-si, KR;

Chan Kwak, Yongin-si, KR;

Jaekwan Kim, Hwaseong-si, KR;

Jooho Lee, Hwaseong-si, KR;

Jinyoung Hwang, Incheon, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Camie S Thompson

Int. Cl.
CPC ...
H01B 1/22 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); C23F 1/14 (2006.01); C23F 1/30 (2006.01); G06F 3/041 (2006.01); H01L 29/41 (2006.01); G06F 3/044 (2006.01); H01L 31/0224 (2006.01); C23F 1/02 (2006.01); C23F 1/40 (2006.01); H01L 29/06 (2006.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01B 1/22 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); C23F 1/02 (2013.01); C23F 1/14 (2013.01); C23F 1/30 (2013.01); C23F 1/40 (2013.01); G06F 3/041 (2013.01); G06F 3/044 (2013.01); G06F 3/0412 (2013.01); H01L 29/413 (2013.01); H01L 31/022466 (2013.01); G06F 2203/04103 (2013.01); G06F 2203/04112 (2013.01); H01L 29/0673 (2013.01); H01L 33/42 (2013.01);
Abstract

Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.

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