The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Aug. 08, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
John A. Fifield, Underhill, VT (US);
Dale E. Pontius, Colchester, VT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/07 (2006.01); G11C 11/408 (2006.01); G11C 11/4074 (2006.01); H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 11/4074 (2013.01); H02M 3/07 (2013.01); H05K 999/99 (2013.01); H02M 3/158 (2013.01);
Abstract
A voltage boost circuit for eDram using thin oxide field effect transistors (FETs) is disclosed. The voltage boost circuit includes a boost capacitor which is precharged with a precharge voltage in a precharge stage and which provides a boosted supply voltage to a thin oxide FET during a pump phase. The voltage boost circuit further include a drive capacitor which provides a turn on voltage to the thin oxide FET so that the boosted supply voltage can pass to an output node in the pump phase.