The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Jul. 17, 2015
Applicant:

Pmd Technologies Ag, Siegen, DE;

Inventors:

Michael Sommer, Siegen, DE;

Jens Prima, Siegen, DE;

Christoph Kamerow, Siegen, DE;

Assignee:

PMD Technologies AG, Siegen, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01C 3/08 (2006.01); G01S 7/487 (2006.01); G01S 17/36 (2006.01); G01S 17/89 (2006.01); G01S 7/481 (2006.01); G01S 7/486 (2006.01);
U.S. Cl.
CPC ...
G01S 7/4873 (2013.01); G01S 7/4816 (2013.01); G01S 7/4863 (2013.01); G01S 7/4865 (2013.01); G01S 17/36 (2013.01); G01S 17/89 (2013.01);
Abstract

The present invention provides a time-of-flight sensor () including at least one time-of-flight pixel () for demodulating a received modulated light beam (Sp), wherein the time-of-flight pixel () comprises at least two integrating nodes (Ga, Gb) and the integration nodes (Ga, Gb) are connected to a device () for charge compensation, wherein the charge compensation device () comprises at least two SBI input transistors (M, M) which at a potential (Ua, Ub) of the integration nodes (Ga, Gb) which according to the amount exceeds an SBI threshold value (U) drive SBI current transistors (M, M) such that at both integration nodes (Ga, Gb) a compensating current (i) of the same level flows, wherein the source terminals of the SBI-current transistors (M, M) are not connected to a supply voltage (U) but are connected to a working voltage (U, U) (FIG.).


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