The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Aug. 29, 2017
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Yang Yang, Los Angeles, CA (US);

You Seung Rim, Los Angeles, CA (US);

Jonathan Yang, Los Angeles, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/407 (2006.01); G01N 27/414 (2006.01); G01N 33/543 (2006.01); G01N 33/552 (2006.01); A61B 5/1468 (2006.01); C12Q 1/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4146 (2013.01); A61B 5/1468 (2013.01); C12Q 1/006 (2013.01); G01N 27/4071 (2013.01); G01N 27/4145 (2013.01); G01N 33/5438 (2013.01); G01N 33/552 (2013.01);
Abstract

Electrochemical and bio sensors using metal oxide semiconductors and method of making the same are described herein. The sensor includes a gate electrode, a dielectric layer over the gate electrode, a channel layer over the dielectric layer, and source and drain electrodes formed on the channel layer to provide a field effect transistor structure. The channel layer is a metal oxide semiconductor film that has a substantially uniform thickness of at least 3 nm thick and less than 10 nm thick. The metal oxide semiconductor film is functionalized with molecules attached thereto that are open to make contact with a fluid for detection of at least one component or at least one physical or chemical property of the fluid.


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