The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 08, 2019

Filed:

Apr. 04, 2017
Applicant:

The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);

Inventors:

Adam L. Friedman, Silver Spring, MD (US);

F. Keith Perkins, Alexandria, VA (US);

James C. Culbertson, Alexandria, VA (US);

Aubrey T. Hanbicki, Washington, DC (US);

Paul M. Campbell, Alexandria, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 29/24 (2006.01); G03F 7/40 (2006.01); H01L 29/66 (2006.01); G03F 1/20 (2012.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4141 (2013.01); G03F 1/20 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); G01N 33/0057 (2013.01); G03F 7/405 (2013.01);
Abstract

A method of making a low dimensional material chemical vapor sensor comprising providing a monolayer of a transition metal dichalcogenide, applying the monolayer to a substrate, applying a PMMA film, defining trenches, and placing the device in a n-butyl lithium (nbl) bath. A low dimensional material chemical vapor sensor comprising a monolayer of a transition metal dichalcogenide, the monolayer applied to a substrate, a region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium, the region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium have transitioned from a semiconducting to metallic phase, metal contacts on the region or regions of the transition metal dichalcogenide that have been treated with the n-butyl lithium.


Find Patent Forward Citations

Friedman, Adam. (2019). 2h/1t phase contact engineering for high performance transition metal dichalcogenide chemical vapor sensors (U.S. Patent No. 10436744). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10436744

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…