The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Feb. 22, 2018
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Morimichi Watanabe, Nagoya, JP;
Kei Sato, Tokai, JP;
Kiyoshi Matsushima, Nagoya, JP;
Tsutomu Nanataki, Toyoake, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/00 (2006.01); C30B 29/20 (2006.01); C04B 35/111 (2006.01); C01F 7/02 (2006.01); C30B 19/02 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 33/00 (2010.01); C30B 1/12 (2006.01); C30B 19/12 (2006.01); C30B 28/02 (2006.01); C30B 29/40 (2006.01); C04B 35/634 (2006.01); C04B 35/638 (2006.01); C04B 35/645 (2006.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
C30B 29/20 (2013.01); C01F 7/02 (2013.01); C04B 35/111 (2013.01); C04B 35/638 (2013.01); C04B 35/6342 (2013.01); C04B 35/645 (2013.01); C30B 1/12 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 25/18 (2013.01); C30B 25/183 (2013.01); C30B 28/02 (2013.01); C30B 29/406 (2013.01); H01L 21/0243 (2013.01); H01L 21/6835 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); C01P 2002/54 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/5292 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6586 (2013.01); C04B 2235/72 (2013.01); C04B 2235/727 (2013.01); C04B 2235/728 (2013.01); C04B 2235/786 (2013.01); C04B 2235/787 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68345 (2013.01);
Abstract
An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.