The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Jan. 29, 2016
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Kyohei Yoshimura, Kanagawa, JP;

Toshifumi Wakano, Kanagawa, JP;

Yusuke Otake, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H04N 5/232 (2006.01); G02B 7/34 (2006.01); H01L 27/14 (2006.01); H01L 27/146 (2006.01); G02B 7/36 (2006.01); H01L 27/30 (2006.01); H04N 5/369 (2011.01); H04N 9/04 (2006.01); H04N 5/357 (2011.01);
U.S. Cl.
CPC ...
H04N 5/23212 (2013.01); G02B 7/34 (2013.01); G02B 7/365 (2013.01); H01L 27/14 (2013.01); H01L 27/146 (2013.01); H01L 27/307 (2013.01); H04N 5/3696 (2013.01); H04N 9/045 (2013.01); H04N 5/357 (2013.01); H04N 2209/045 (2013.01);
Abstract

The present disclosure relates to an image pickup device that inhibits color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for image plane phase difference AF. The image plane phase difference detection pixel includes: a first photoelectric conversion section; an upper electrode section that is one of electrodes disposed facing each other, the upper electrode section being formed on a light incident side first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other, the lower electrode section being formed on an opposite side of the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light. The present disclosure is applicable to image sensors.


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