The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Jul. 13, 2018
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Takaaki Tada, Itano-gun, JP;

Takayoshi Wakaki, Anan, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 33/00 (2010.01); H01L 33/58 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/005 (2013.01); H01L 33/0095 (2013.01); H01L 33/58 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/8592 (2013.01); H01L 2924/19107 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A light emitting device includes: a light emitting element including: a semiconductor structure including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, each containing a nitride semiconductor, a p-electrode disposed on a portion of a surface of the p-type semiconductor layer on a side opposite to a surface provided with the active layer, and an n-electrode disposed on a surface of the n-type semiconductor layer on a side opposite to a surface provided with the active layer in a region other than a region facing the p-electrode; and a protective film continuously covering a surface of the n-electrode and a surface of the n-type semiconductor layer. The protective film includes a first metal oxide film and a second metal oxide film that are alternately layered, the first metal oxide film containing a first metal, and the second metal oxide film containing a second metal.


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