The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Aug. 23, 2016
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Barbara Behr, Abensberg, DE;

Andreas Weimar, Regensburg, DE;

Mathias Wendt, Hausen, DE;

Marcus Zenger, Hausen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 23/00 (2006.01); H01L 33/62 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); H01L 24/29 (2013.01); H01L 24/30 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 33/62 (2013.01); H01L 33/32 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29084 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29164 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29169 (2013.01); H01L 2224/30505 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33505 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/83805 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A device and a method for producing a device are disclosed. In an embodiment the device includes a first component; a second component; and a connecting element arranged between the first component and the second component, wherein the connecting element comprises at least a first phase and a second phase, wherein the first phase comprises a first metal having a first concentration, a second metal having a second concentration and a third metal having a third concentration, wherein the second phase comprises the first metal having a fourth concentration, the second metal and the third metal, wherein the first metal, the second metal and the third metal are different from one another and are suitable for reacting at a processing temperature of less than 200° C., and wherein the following applies: c11≥c25 and c11≥c13≥c12.


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