The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Jan. 02, 2019
Semiconductor device with non-ohmic contact between sic and a contact layer containing metal nitride
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Jens Peter Konrath, Villach, AT;
Ronny Kern, Finkenstein, AT;
Stefan Krivec, Arnoldstein, AT;
Ulrich Schmid, Vienna, AT;
Laura Stoeber, Vienna, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/0495 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/868 (2013.01); H01L 29/1602 (2013.01); H01L 29/2003 (2013.01);
Abstract
According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a metal nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.