logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10431697 B1

PDFFull Text
Date of Patent:
Oct. 01, 2019

Filed:

Sep. 22, 2016

Bi-directional zener diode having a first and second impurity regions groups formed in surface portion of a substrate and a first electrode electrically connected to at least one first impurity regions, and not connected from at least another one

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Hiroki Yamamoto, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Anh D Mai

Int. Cl.
CPC ...
H01L 29/866 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/866 (2013.01); H01L 29/417 (2013.01); H01L 29/66106 (2013.01); H01L 21/2253 (2013.01);
Abstract

A bidirectional Zener diode includes a substrate. A first conductivity type base region is formed in a surficial portion of the substrate. A second conductivity type first impurity region is formed in a surficial portion of the base region so as to form a pn junction with the base region. A second conductivity type second impurity region is formed in a surficial portion of the base region in a manner spaced apart from the first impurity region so as to form a pn junction with the base region. A first electrode is arranged at the surface of the substrate. A second electrode is arranged at the surface of the substrate. A dimension of the base region along the surface of the substrate between the first impurity region and the second impurity region is equal to or greater than 4.0 μm and equal to or smaller than 12.5 μm.

Find Patent Forward Citations

Loading…