The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

May. 20, 2016
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Hu Meng, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01); H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78675 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1288 (2013.01); H01L 27/3262 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H01L 29/4958 (2013.01); H01L 29/66757 (2013.01); H01L 29/78618 (2013.01); H01L 29/78633 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 51/0541 (2013.01); H01L 51/0048 (2013.01);
Abstract

Embodiments of the present disclosure provide preparation methods for a semiconductor layer and a TFT, a TFT and an array substrate. The preparation method for a semiconductor layer includes forming a silicon dioxide film on a substrate; forming sidewalls at two ends of the semiconductor layer to be formed by patterning process; performing amination treatment on the sidewalls so that an aminosiloxane monolayer self-assembly is formed on the surface of the sidewalls; carboxylating a carbon nanotube solution and making the carboxylated carbon nanotube solution on the surface of the substrate with the sidewalls formed to form a carbon nanotube film; removing portions of the carbon nanotube film other than the portion between the sidewalls to form a semiconductor layer.


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