The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Jul. 30, 2018
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Shinya Kyogoku, Tsukuba, JP;

Ryosuke Iijima, Setagaya, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 29/0696 (2013.01); H01L 29/086 (2013.01); H01L 29/0878 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first conductive portion, a first extension portion, a first conductive region, a first extension region, a semiconductor portion, and an insulating portion. The first conductive portion includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, and a sixth portion. The first extension portion is electrically connected to the first conductive portion. The first conductive region is provided between the first portion and the second portion, between the third portion and the fourth portion, and between the fifth portion and the sixth portion. The first extension region is electrically connected to the first conductive region. The semiconductor portion includes silicon carbide and includes first to third semiconductor regions. The insulating portion is provided between the first conductive portion and the semiconductor portion and between the first extension portion and the semiconductor portion.


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