The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Feb. 20, 2017
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Philippe Boivin, Venelles, FR;
Jean-Jacques Fagot, Rousset, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
Abstract
A MOS transistor with two vertical gates is formed within a substrate zone of a semiconductor substrate doped with a first type of conductivity and separated from a remaining portion of the substrate by two first parallel trenches extending in a first direction. An isolated gate region rests on each flank of the substrate zone and on a portion of the bottom of the corresponding trench to form the two vertical gates. At least one gate connection region electrically connects the two vertical gates. A first buried region located under the substrate zone is doped with a second type of conductivity to form a first conduction electrode of the MOS transistor. A second region doped with the second type of conductivity is located at the surface of the substrate zone to form a second conduction electrode of the MOS transistor.