The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Jan. 22, 2018
Applicant:

Silicon Optronics, Inc., Hsinchu, TW;

Inventor:

Jun-Bo Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/30 (2006.01); H01L 27/148 (2006.01); H01L 27/146 (2006.01); A61B 5/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/148 (2013.01); H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); A61B 5/7203 (2013.01); H01L 27/1462 (2013.01); H01L 27/14603 (2013.01); H01L 27/14623 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14678 (2013.01); H01L 27/14683 (2013.01); H01L 27/307 (2013.01); H03M 2201/8192 (2013.01);
Abstract

An image sensor device is provided. The image sensor device includes a substrate, a plurality of photoelectric conversion units for collecting image signals disposed in the substrate, a first dielectric layer disposed upon the substrate, a plurality of metal layers disposed in the first dielectric layer, a trench disposed in the first dielectric layer and located between the adjacent metal layers, a filling material filled in the trench, a second dielectric layer disposed upon the first dielectric layer, and a light source or a detected object disposed over the second dielectric layer. The metal layer adjacent to the substrate is defined as a first metal layer. The metal layer adjacent to the top of the first dielectric layer is defined as a top metal layer. The trench extends from the top of the first dielectric layer towards the substrate to the first metal layer.


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