The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Jan. 10, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 23/485 (2006.01); H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 27/11 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 23/485 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01); H01L 29/0653 (2013.01); H01L 29/41791 (2013.01); H01L 29/665 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 29/165 (2013.01);
Abstract
A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.