The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
May. 11, 2015
Applicant:
Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;
Inventor:
Kota Ise, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49582 (2013.01); H01L 23/3107 (2013.01); H01L 23/49503 (2013.01); H01L 23/49513 (2013.01); H01L 23/49524 (2013.01); H01L 23/49541 (2013.01); H01L 23/49548 (2013.01); H01L 23/49562 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/45 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48471 (2013.01); H01L 2224/48479 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/173 (2013.01); H01L 2924/1715 (2013.01); H01L 2924/181 (2013.01); H01L 2924/20642 (2013.01); H01L 2924/20643 (2013.01);
Abstract
A semiconductor device is provided with a semiconductor element, a main lead on which the semiconductor element is disposed, and a resin package that covers the semiconductor element and the main lead. A notch that is recessed toward the center of the main lead in plan view as seen in the thickness direction of the semiconductor element is formed in the main lead.