The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Oct. 22, 2018
Applicant:

Kanto Denka Kogyo Co., Ltd., Tokyo, JP;

Inventors:

Yoshinao Takahashi, Gunma, JP;

Korehito Kato, Gunma, JP;

Tetsuya Fukasawa, Gunma, JP;

Yoshihiko Iketani, Gunma, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); C09K 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C09K 13/00 (2013.01); H01L 21/02527 (2013.01); H01L 21/02532 (2013.01); H01L 21/31144 (2013.01);
Abstract

A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.


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