The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Sep. 18, 2017
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chih-Ming Kao, Jhubei, TW;
Rong-Gen Wu, Taichung, TW;
Han-Wen Chang, Sinfong Township, TW;
Chun-Hsu Chen, Sinpu Township, TW;
Yu-Chun Ho, New Taipei, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A method of fabricating a semiconductor structure includes providing a semiconductor substrate, forming a trench in the semiconductor substrate, overfilling the trench with a first semiconductor material, wherein the first semiconductor material does not have a dopant, forming a second semiconductor material on the first semiconductor material, wherein the second semiconductor material contains a dopant, and performing a thermal treatment so that the dopant in the second semiconductor material diffuses into the first semiconductor material to form a doped third semiconductor material in the trench.