The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Aug. 03, 2017
Woohyun Lee, Seoul, KR;
Sang-kuk Kim, Seongnam-si, KR;
Jong-kyu Kim, Seongnam-si, KR;
Yil-hyung Lee, Hwaseong-si, KR;
Jongsoon Park, Suwon-si, KR;
Hyeji Yoon, Hwaseong-si, KR;
Woohyun Lee, Seoul, KR;
Sang-Kuk Kim, Seongnam-si, KR;
Jong-Kyu Kim, Seongnam-si, KR;
Yil-hyung Lee, Hwaseong-si, KR;
Jongsoon Park, Suwon-si, KR;
Hyeji Yoon, Hwaseong-si, KR;
Abstract
An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.