The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Aug. 30, 2017
Applicant:

Spts Technologies Limited, Newport, GB;

Inventors:

Huma Ashraf, Newport, GB;

Kevin Riddell, Abergavenny, GB;

Roland Mumford, Cardiff, GB;

Grant Baldwin, Newport, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32935 (2013.01); H01J 37/32082 (2013.01); H01J 37/32715 (2013.01); H01J 37/32724 (2013.01); H01J 37/32917 (2013.01); H01L 21/67069 (2013.01); H01L 21/67288 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method and system are for monitoring and controlling deformation of a wafer substrate during a plasma etching of the wafer substrate. The method includes disposing a wafer substrate on a platen assembly within a process chamber so that an entire upper surface of the wafer is exposed, passing a process gas into the process chamber, applying a radio frequency bias voltage to the platen assembly, generating a plasma within the process chamber, monitoring a voltage difference between the platen assembly and the process chamber, during the etch process, and attenuating or extinguishing the plasma to prevent further etching once a threshold monitored voltage is reached.


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