The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Mar. 01, 2018
Applicant:

Nxp B.v., Eindhoven, NL;

Inventor:
Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 17/14 (2006.01); H01L 27/102 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
G11C 17/165 (2013.01); G11C 17/146 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 27/1026 (2013.01); H01L 27/11206 (2013.01);
Abstract

A memory system comprising: a memory cell. The memory cell comprising a poly-fuse-resistor; and a bipolar junction transistor having a collector-emitter channel and a base-terminal. The collector-emitter channel of the bipolar junction transistor is connected in series with the poly-fuse resistor between a supply-voltage-terminal and a ground-terminal. The base-terminal of the bipolar junction transistor is configured to receive a transistor-control-signal to selectively control a current flow through the poly-fuse-resistor.


Find Patent Forward Citations

Daanen, Antonius Martinus Jacobus. (2019). Memory system (U.S. Patent No. 10431317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10431317

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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