The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

Jun. 03, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Seung-Bum Kim, Hwaseong-si, KR;

Deok-Woo Lee, Suwon-si, KR;

Dong-Hun Kwak, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/30 (2006.01); G11C 16/14 (2006.01); G11C 16/10 (2006.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
G11C 16/3445 (2013.01); G11C 11/5671 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/30 (2013.01); G11C 16/0483 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract

A non-volatile memory device includes multiple word lines, and a voltage generator. Some of the word lines correspond to a deterioration area. The voltage generator is configured to generate a program voltage provided to multiple memory cells through the word lines. Control logic implemented by the non-volatile memory device is configured to control a program operation and an erase operation on the word lines. The deterioration area includes word lines of a first group and word lines of a second group. The control logic is configured to control a program sequence so that each of the word lines of the second group is programmed after an adjacent word line of the first group is programmed, and to control a distribution so that a threshold voltage level corresponding to an erase state of each of the word lines of the first group is higher than a threshold voltage level corresponding to an erase state of each of the word lines of the second group.


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