The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Mar. 15, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Sang-yeop Baeck, Yongin-si, KR;
Siddharth Gupta, Hwaseong-si, KR;
In-hak Lee, Daegu, KR;
Jae-seung Choi, Hwaseong-si, KR;
Tae-hyung Kim, Yongin-si, KR;
Dae-young Moon, Yongin-si, KR;
Dong-wook Seo, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Yeongtong-Gu, KR;
Abstract
Provided are a voltage control circuit including an assist circuit and a memory device including the voltage control circuit. The memory device includes: a volatile memory cell array, which is connected to a plurality of word lines and includes a memory cell including at least one transistor; and an assist circuit, which is connected to at least one of the plurality of word lines and adjusts a driving voltage level of each of the plurality of word lines, wherein the assist circuit includes a diode N-channel metal oxide semiconductor (NMOS) transistor having a gate and a drain connected to each other.